Missing Links?: 87 Citation Matrix | Graphs | Glossary HistCite Guide About |
Nodes: 876,
Authors: 1430,
Journals: 212,
Outer References: 26806,
Words: 1958
Collection span: 1951 - 2005
View: Overview. Sorted by journal name.
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# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
---|---|---|---|---|---|
201 | 2 | 26 | 875 2005 EUROPEAN JOURNAL OF INORGANIC CHEMISTRY (9): 1747-1750 Exner O; Bohm S Acidities of nitrous and nitric acids | 0 | 0 |
202 | 1 | 8 | 572 1978 GAZZETTA CHIMICA ITALIANA 108 (7-8): 393-394 REQUENA A; LOSANA JA; FUSTER A; SERNA A VIBRATIONAL TRANSITION-PROBABILITIES IN DIATOMIC-MOLECULES | 3 | 3 |
203 | 1 | 13 | 596 1979 GEOPHYSICAL RESEARCH LETTERS 6 (3): 151-154 MENZIES RT REMOTE MEASUREMENT OF C-LAMBDA-O IN THE STRATOSPHERE | 0 | 48 |
204 | 7 | 23 | 826 1995 GEOPHYSICAL RESEARCH LETTERS 22 (18): 2485-2488 BECKER KH; KLEFFMANN J; KURTENBACH R; WIESEN P LINE-STRENGTH MEASUREMENTS OF TRANS-HONO NEAR 1255 CM(-1) BY TUNABLE DIODE-LASER SPECTROMETRY | 2 | 14 |
205 | 0 | 0 | 735 1985 HEWLETT-PACKARD JOURNAL 36 (11): 34-35 MOORE GE; SEYMOUR RS; BLOOMQUIST DR MANUFACTURING THIN-FILM DISKS | 0 | 0 |
206 | 1 | 12 | 521 1976 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 20 (3): 228-234 STAPPER CH LSI YIELD MODELING AND PROCESS MONITORING | 14 | 41 |
207 | 4 | 24 | 617 1980 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 24 (3): 398-409 STAPPER CH; MCLAREN AN; DRECKMANN M YIELD MODEL FOR PRODUCTIVITY OPTIMIZATION OF VLSI MEMORY CHIPS WITH REDUNDANCY AND PARTIALLY GOOD PRODUCT | 13 | 88 |
208 | 1 | 178 | 643 1981 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 25 (5): 585-602 PUGH EW; HENLE RA; CRITCHLOW DL; RUSSELL LA SOLID-STATE MEMORY DEVELOPMENT IN IBM | 1 | 13 |
209 | 5 | 21 | 687 1983 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 27 (6): 545-548 MEISTER B ON MURPHYS YIELD FORMULA | 1 | 2 |
210 | 4 | 13 | 688 1983 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 27 (6): 549-557 STAPPER CH MODELING OF INTEGRATED-CIRCUIT DEFECT SENSITIVITIES | 2 | 60 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
211 | 4 | 16 | 756 1986 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 30 (3): 326-338 STAPPER CH ON YIELD, FAULT DISTRIBUTIONS, AND CLUSTERING OF PARTICLES | 3 | 45 |
212 | 6 | 21 | 771 1987 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 31 (6): 641-650 STAPPER CH CORRELATION-ANALYSIS OF PARTICLE CLUSTERS ON INTEGRATED-CIRCUIT WAFERS | 0 | 11 |
213 | 1 | 13 | 850 2000 IBM JOURNAL OF RESEARCH AND DEVELOPMENT 44 (1-2): 112-118 Stapper CH LSI yield modeling and process monitoring (Reprinted from IBM Journal of Research and Development, vol 20, 1976) | 0 | 0 |
214 | 1 | 25 | 285 1969 ICARUS 11 (3): 386-& YOUNG LDG INTERPRETATION OF HIGH-RESOLUTION SPECTRA OF MARS .1. CO2 ABUNDANCE AND SURFACE PRESSURE DERIVED FROM CURVE OF GROWTH | 1 | 15 |
215 | 1 | 23 | 345 1971 ICARUS 15 (1): 27-& TRAFTON L SEMIEMPIRICAL MODEL FOR MEAN TRANSMISSION OF A MOLECULAR BAND AND APPLICATION TO 10MU AND 16MU BANDS OF NH3 | 3 | 12 |
216 | 3 | 31 | 397 1972 ICARUS 16 (3): 543-& HORN D; HERR KC; WINER AM; MCAFEE JM; PIMENTEL GC COMPOSITION OF MARTIAN ATMOSPHERE - MINOR CONSTITUENTS | 0 | 22 |
217 | 7 | 90 | 398 1972 ICARUS 17 (3): 632-658 YOUNG LDG HIGH-RESOLUTION SPECTRA OF VENUS - REVIEW | 0 | 73 |
218 | 7 | 21 | 789 1989 IEE PROCEEDINGS-E COMPUTERS AND DIGITAL TECHNIQUES 136 (3): 178-186 YANTCHEV J ADAPTIVE, LOW LATENCY, DEADLOCK-FREE PACKET ROUTING FOR NETWORKS OF PROCESSORS | 0 | 17 |
219 | 7 | 21 | 790 1989 IEE PROCEEDINGS-E COMPUTERS AND DIGITAL TECHNIQUES 136 (3): 187-196 CHEN W; MAVOR J; DENYER PB; RENSHAW D YIELD ESTIMATION FOR SERIAL SUPERCHIP | 0 | 2 |
220 | 0 | 0 | 713 1984 IEEE DESIGN & TEST OF COMPUTERS 1 (4): 15-23 MOORE GE A MACRO VIEW OF MICROELECTRONICS - MOORE,GORDON,E. OF INTEL | 0 | 0 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
221 | 1 | 16 | 863 2002 IEEE ELECTRICAL INSULATION MAGAZINE 18 (1): 16-20 Oldervoll F High electric stress and insulation challenges in integrated microelectronic circuits | 0 | 0 |
222 | 3 | 11 | 399 1972 IEEE JOURNAL OF QUANTUM ELECTRONICS QE 8 (10): 811-& DJEU N; SEARLES SK NEW METHOD OF MEASURING TEMPERATURE, INVERSION RATIO, AND PRESSURE-BROADENED LINEWIDTH IN A CW MOLECULAR LASER | 0 | 6 |
223 | 2 | 23 | 441 1973 IEEE JOURNAL OF QUANTUM ELECTRONICS QE 9 (1): 64-72 MOLINA MJ; PIMENTEL GC CHEMICAL LASER STUDIES OF VIBRATIONAL ENERGY-DISTRIBUTIONS - EQUAL-GAIN AND ZERO-GAIN TEMPERATURE TECHNIQUES | 0 | 25 |
224 | 1 | 11 | 316 1970 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 5 (5): 181-& REGITZ WM; KARP JA 3-TRANSISTOR-CELL 1024-BIT 500-NS MOS RAM | 0 | 16 |
225 | 1 | 7 | 346 1971 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 6 (5): 283-& WIEDMANN SK; BERGER HH SMALL-SIZE LOW-POWER BIPOLAR MEMORY CELL | 0 | 10 |
226 | 1 | 8 | 347 1971 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 6 (5): 301-& FROHMANB.D FULLY DECODED 2048-BIT ELECTRICALLY PROGRAMMABLE FAMOS READ-ONLY MEMORY | 0 | 21 |
227 | 1 | 51 | 348 1971 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 6 (5): 327-& SCHLACTE.MM; KEEN RS; SCHNABLE GL SOME RELIABILITY CONSIDERATIONS PERTAINING TO LSI TECHNOLOGY | 0 | 6 |
228 | 1 | 10 | 400 1972 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 7 (5): 389-& GUPTA A; LATHROP JW YIELD ANALYSIS OF LARGE INTEGRATED CIRCUIT CHIPS | 2 | 17 |
229 | 1 | 9 | 442 1973 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 8 (5): 292-298 ABBOTT RA; REGITZ WM; KARP JA 4K MOS DYNAMIC RANDOM-ACCESS MEMORY | 0 | 9 |
230 | 3 | 12 | 468 1974 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 9 (3): 86-95 WARNER RM APPLYING A COMPOSITE MODEL TO IC-YIELD PROBLEM | 0 | 54 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
231 | 2 | 28 | 469 1974 IEEE JOURNAL OF SOLID-STATE CIRCUITS SC 9 (3): 96-103 GUPTA A; PORTER WA; LATHROP JW DEFECT ANALYSIS AND YIELD DEGRADATION OF INTEGRATED-CIRCUITS | 0 | 33 |
232 | 1 | 9 | 488 1975 IEEE JOURNAL OF SOLID-STATE CIRCUITS 10 (6): 537-539 STAPPER CH COMPOSITE MODEL TO IC YIELD PROBLEM | 16 | 44 |
233 | 1 | 10 | 547 1977 IEEE JOURNAL OF SOLID-STATE CIRCUITS 12 (5): 540-546 PAZ O; LAWSON TR MODIFICATION OF POISSON STATISTICS - MODELING DEFECTS INDUCED BY DIFFUSION | 21 | 47 |
234 | 3 | 14 | 757 1986 IEEE JOURNAL OF SOLID-STATE CIRCUITS 21 (1): 193-198 STAPPER CH THE DEFECT-SENSITIVITY EFFECT OF MEMORY CHIPS | 0 | 10 |
235 | 5 | 12 | 758 1986 IEEE JOURNAL OF SOLID-STATE CIRCUITS 21 (2): 362-365 FLACK VF ESTIMATING VARIATION IN IC YIELD ESTIMATES | 0 | 4 |
236 | 1 | 19 | 845 1999 IEEE JOURNAL OF SOLID-STATE CIRCUITS 34 (3): 339-347 Ng HT; Ziazadeh RM; Allstot DJ A multistage amplifier technique with embedded frequency compensation | 0 | 15 |
237 | 0 | 0 | 190 1965 IEEE SPECTRUM 2 (3): 49-& MOORE GE MOS TRANSISTOR AS AN INDIVIDUAL DEVICE AND IN INTEGRATED ARRAYS | 0 | 0 |
238 | 0 | 5 | 286 1969 IEEE SPECTRUM 6 (10): 28-& VADASZ LL; GROVE AS; ROWE TA; MOORE GE SILICON-GATE TECHNOLOGY | 39 | 39 |
239 | 0 | 9 | 866 2003 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY 13 (2): 219-222 Matthews J; Lee SY; Wellstood FC; Gilbertson AF; Moore GE; et al. Multi channel high-T-C scanning SQUID microscope | 2 | 2 |
240 | 6 | 62 | 759 1986 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 5 (1): 114-130 MALY W; STROJWAS AJ; DIRECTOR SW VLSI YIELD PREDICTION AND ESTIMATION - A UNIFIED FRAMEWORK | 0 | 45 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
241 | 7 | 30 | 791 1989 IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS 8 (12): 1314-1318 STAPPER CH SIMULATION OF SPATIAL FAULT DISTRIBUTIONS FOR INTEGRATED-CIRCUIT YIELD ESTIMATIONS | 0 | 7 |
242 | 12 | 58 | 780 1988 IEEE TRANSACTIONS ON COMPUTERS 37 (1): 88-110 HARDEN JC; STRADER NR ARCHITECTURAL YIELD OPTIMIZATION FOR WSI | 1 | 13 |
243 | 6 | 27 | 822 1994 IEEE TRANSACTIONS ON COMPUTERS 43 (6): 687-697 THIBEAULT C; SAVARIA Y; HOULE JL A FAST METHOD TO EVALUATE THE OPTIMUM NUMBER OF SPARES IN DEFECT-TOLERANT INTEGRATED-CIRCUITS | 0 | 1 |
244 | 0 | 0 | 548 1977 IEEE TRANSACTIONS ON CONSUMER ELECTRONICS 23 (1): R10-R16 MOORE GE COST STRUCTURE OF SEMICONDUCTOR INDUSTRY AND ITS IMPLICATIONS FOR CONSUMER ELECTRONICS - LUNCHEON ADDRESS | 2 | 2 |
245 | 0 | 0 | 287 1969 IEEE TRANSACTIONS ON ELECTRON DEVICES ED16 (2): 234-& MOORE GE TRENDS IN SILICON DEVICE TECHNOLOGY | 0 | 0 |
246 | 1 | 36 | 349 1971 IEEE TRANSACTIONS ON ELECTRON DEVICES ED18 (10): 931-& BROWN DM; CADY WR; SPRAGUE JW; SALVAGNI PJ P-CHANNEL REFRACTORY METAL SELF-REGISTERED MOSFET | 0 | 31 |
247 | 1 | 25 | 401 1972 IEEE TRANSACTIONS ON ELECTRON DEVICES ED19 (1): 54-& ENGELER WE; BROWN DM PERFORMANCE OF REFRACTORY-METAL MULTILEVEL INTERCONNECTION SYSTEM | 0 | 23 |
248 | 1 | 6 | 402 1972 IEEE TRANSACTIONS ON ELECTRON DEVICES ED19 (11): 1219-& MAI CC; HSWE M; PALMER RB ION IMPLANTATION COMBINED WITH SILICON-GATE TECHNOLOGY | 0 | 3 |
249 | 1 | 72 | 443 1973 IEEE TRANSACTIONS ON ELECTRON DEVICES ED20 (2): 91-105 OVSHINSK.SR; FRITZSCH.H AMORPHOUS SEMICONDUCTORS FOR SWITCHING, MEMORY, AND IMAGING APPLICATIONS | 0 | 109 |
250 | 1 | 15 | 444 1973 IEEE TRANSACTIONS ON ELECTRON DEVICES ED20 (2): 188-194 ZINGG RJ; ZIMMERMA.RE; POHM AV TERMINAL MULTIPLEXOR APPLICATION OF OVONIC MEMORIES | 0 | 0 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
251 | 1 | 25 | 445 1973 IEEE TRANSACTIONS ON ELECTRON DEVICES ED20 (2): 195-205 NEALE RG; ASELTINE JA APPLICATION OF AMORPHOUS MATERIALS TO COMPUTER MEMORIES | 0 | 8 |
252 | 1 | 7 | 446 1973 IEEE TRANSACTIONS ON ELECTRON DEVICES ED20 (7): 655-657 STAPPER CH DEFECT DENSITY DISTRIBUTION FOR LSI YIELD CALCULATIONS | 1 | 69 |
253 | 1 | 4 | 447 1973 IEEE TRANSACTIONS ON ELECTRON DEVICES ED20 (12): 1162-1164 MAI CC; CHAN TC; PALMER RB 3-MASK SELF-ALIGNED MOS TECHNOLOGY | 0 | 0 |
254 | 1 | 143 | 689 1983 IEEE TRANSACTIONS ON ELECTRON DEVICES 30 (11): 1480-1497 CHOW TP; STECKL AJ REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY | 1 | 109 |
255 | 3 | 45 | 714 1984 IEEE TRANSACTIONS ON ELECTRON DEVICES 31 (11): 1549-1555 DENNARD RH EVOLUTION OF THE MOSFET DYNAMIC RAM - A PERSONAL VIEW | 0 | 11 |
256 | 1 | 30 | 837 1997 IEEE TRANSACTIONS ON ELECTRON DEVICES 44 (7): 1136-1142 Walstra SV; Sah CT Thin oxide thickness extrapolation from capacitance-voltage measurements | 0 | 21 |
257 | 1 | 12 | 644 1981 IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS 17 (1): 58-62 TURNER EB; WILLEY HM MICROPROCESSOR-BASED UNIVERSAL MOTOR PROTECTION SYSTEM | 0 | 1 |
258 | 0 | 3 | 261 1968 IEEE TRANSACTIONS ON MAGNETICS MAG4 (3): 319-& MOORE GE SEMICONDUCTOR MEMORIES | 0 | 0 |
259 | 1 | 21 | 317 1970 IEEE TRANSACTIONS ON MAGNETICS MAG6 (3): 584-& TERMAN LM FET MEMORY SYSTEMS | 0 | 1 |
260 | 0 | 0 | 318 1970 IEEE TRANSACTIONS ON MAGNETICS MAG6 (3): 590-& MOORE GE COMPETITIVE POTENTIAL OF SEMICONDUCTOR MEMORIES | 0 | 0 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
261 | 1 | 13 | 319 1970 IEEE TRANSACTIONS ON MAGNETICS MAG6 (4): 774-& CHANG H; MAZZEO NJ; ROMANKIW LT 0.25 X 10-6 BIT/IN2 NDRO COUPLED FILM MEMORY ELEMENTS | 0 | 3 |
262 | 0 | 0 | 350 1971 IEEE TRANSACTIONS ON MAGNETICS MAG7 (3): 404-& MOORE GE PERSPECTIVE OF CHARGE-TRANSFER DEVICES AND OTHER SHIFT REGISTERS | 0 | 0 |
263 | 0 | 9 | 351 1971 IEEE TRANSACTIONS ON MAGNETICS MAG7 (3): 751-& MOORE GE HIGH-SPEED STROBOSCOPIC ANALYSIS OF A CURRENT-DRIVE MAGNETIC-DOMAIN PROPAGATING CIRCUIT | 0 | 1 |
264 | 0 | 8 | 522 1976 IEEE TRANSACTIONS ON MAGNETICS 12 (6): 719-721 MOORE GE; COTE LJ DUAL STRIPE MAGNETORESISTIVE READ HEADS FOR SPEED INSENSITIVE TAPE READERS | 2 | 2 |
265 | 1 | 6 | 573 1978 IEEE TRANSACTIONS ON MAGNETICS 14 (5): 518-520 DESSERRE J; HELLE M; LAZZARI JP E-13-B OR CMC7 CHEQUE CODE MR AND CONVENTIONAL READING HEADS COMPARISON | 1 | 3 |
266 | 2 | 23 | 645 1981 IEEE TRANSACTIONS ON MAGNETICS 17 (6): 2884-2889 DRUYVESTEYN WF; VANOOYEN JAC; POSTMA L; RAEMAEKERS ELM; RUIGROK JJM; et al. MAGNETORESISTIVE HEADS | 0 | 18 |
267 | 1 | 6 | 549 1977 IEEE TRANSACTIONS ON NUCLEAR SCIENCE 24 (6): 2336-2340 DONOVAN RP; SIMONS M; BURGER RM RADIATION HARDENED LSI FOR 1980S - CMOS-SOS VS I2L | 0 | 4 |
268 | 0 | 35 | 352 1971 IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS PA90 (5): 2030-& HARRIS LP; MOORE GE COMBUSTION-MHD POWER GENERATION FOR CENTRAL STATIONS | 0 | 0 |
269 | 4 | 15 | 831 1996 IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 9 (3): 447-454 Berglund CN A unified yield model incorporating both defect and parametric effects | 0 | 5 |
270 | 1 | 28 | 873 2004 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS 12 (5): 497-510 Shim BY; Sridhara SR; Shanbhag NR Reliable low-power digital signal processing via reduced precision redundancy | 0 | 0 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
271 | 1 | 13 | 646 1981 INDIAN JOURNAL OF CHEMISTRY SECTION A-INORGANIC BIO-INORGANIC PHYSICAL THEORETICAL & ANALYTICAL CHEMISTRY 20 (1): 83-84 KALBANDKERI RG; PADMA DK; MURTHY ARV PHOSPHORUS TRIFLUORIDE - PREPARATION AND OXIDATION WITH NITROSYL CHLORIDE | 0 | 4 |
272 | 4 | 37 | 470 1974 INDUSTRIAL & ENGINEERING CHEMISTRY FUNDAMENTALS 13 (4): 373-384 ENGLAND C; CORCORAN WH KINETICS AND MECHANISMS OF GAS-PHASE REACTION OF WATER-VAPOR AND NITROGEN-DIOXIDE | 1 | 63 |
273 | 2 | 9 | 448 1973 INFRARED PHYSICS 13 (3): 161-168 POURCIN J; ROMANETT.R DETERMINATION OF HALF-WIDTH AND INTENSITY OF A SPECTRAL-LINE BY METHOD OF NONLINEAR REGRESSION | 1 | 13 |
274 | 1 | 35 | 234 1967 INORGANIC CHEMISTRY 6 (2): 304-& BOHN RK; BAUER SH AN ELECTRON DIFFRACTION STUDY OF STRUCTURES OF NF2 AND N2F4 | 0 | 50 |
275 | 1 | 9 | 288 1969 INORGANIC CHEMISTRY 8 (4): 979-& CLIFFORD AF; ZEILENGA GR PREPARATION AND PROPERTIES OF PENTAFLUOROSULFANYLDICHLORAMINE SF5NCL2 | 1 | 17 |
276 | 4 | 21 | 574 1978 INORGANIC CHEMISTRY 17 (6): 1608-1612 LIVETT MK; NAGYFELSOBUKI E; PEEL JB; WILLETT GD PHOTOELECTRON-SPECTRA OF CHLORAMINE AND DICHLORAMINE | 2 | 22 |
277 | 2 | 34 | 666 1982 INORGANIC CHEMISTRY 21 (4): 1519-1522 KOHLMILLER CK; ANDREWS L MATRIX INFRARED-SPECTRA OF THE NCL2 AND NBR2 FREE-RADICALS | 2 | 12 |
278 | 1 | 11 | 781 1988 INORGANIC CHEMISTRY 27 (10): 1695-1696 THOMAS TD ACIDITIES OF NITRIC AND NITROUS ACIDS | 1 | 8 |
279 | 2 | 8 | 489 1975 INTERNATIONAL JOURNAL OF ELECTRONICS 38 (6): 711-727 DARGAN CL; BURTON P; REDSTALL RM FABRICATION AND PROPERTIES OF CHALCOGENIDE GLASS MEMORY ARRAYS | 0 | 5 |
280 | 3 | 43 | 736 1985 INTERNATIONAL JOURNAL OF QUANTUM CHEMISTRY : 263-279 REYNOLDS CA; THOMSON C ABINITIO CALCULATIONS RELEVANT TO THE MECHANISM OF CHEMICAL CARCINOGENESIS .2. THE NITROUS ACIDIUM ION - A POWERFUL NITROSATING AGENT | 0 | 0 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
281 | 19 | 97 | 846 1999 INTERNATIONAL REVIEWS IN PHYSICAL CHEMISTRY 18 (1): 91-117 De Mare GR; Moussaoui Y Theoretical study of the nitrous acid conformers: comparison of theoretical and experimental structures, relative energies, barrier to rotation and vibrational frequencies | 2 | 9 |
282 | 2 | 28 | 403 1972 JAPANESE JOURNAL OF APPLIED PHYSICS 11 (9): 1251-& MAEKAWA M ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-SILICON NITRIDE SILICON DIOXIDE SILICON STRUCTURES | 1 | 4 |
283 | 1 | 23 | 813 1993 JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 32 (9A): 3729-3733 JAYATISSA AH; NAKANISHI Y; HATANAKA Y PREPARATION OF POLYCRYSTALLINE SILICON THIN-FILMS BY CATHODE-TYPE RF GLOW-DISCHARGE METHOD | 0 | 10 |
284 | 2 | 5 | 404 1972 JETP LETTERS-USSR 15 (6): 237-& AMBARTSU.RV; APATIN VM; LETOKHOV VS SELECTIVE LASER EXCITATION OF HIGH VIBRATIONAL LEVELS OF HCL MOLECULE | 0 | 10 |
285 | 3 | 18 | 66 1959 JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE 56 (3): 296-301 JACOB J DETERMINATION PAR SPECTROGRAPHIE INFRAROUGE DES CONSTANTES DE LEQUILIBRE ENTRE LES FORMES MONOMERE ET DIMERE DU PEROXYDE DAZOTE GAZEUX ET DOMAINE DE VALIDITE DE LA METHODE | 1 | 3 |
286 | 1 | 67 | 814 1993 JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE 90 (3): 579-593 RISKOUAINI R; TREMBLAYGOUTAUDIER C; COHENADAD MT MONOBROMAMINES IN AQUEOUS-MEDIA .1. REACTIVITY TOWARDS AMMONIA, AMINES AND HYDRAZINES | 0 | 2 |
287 | 8 | 45 | 405 1972 JOURNAL DE PHYSIQUE 33 (5-6): 495-& ATWOOD MR; VU H; VODAR B STUDY OF INTENSITY VARIATIONS IN VIBRATION-ROTATION SPECTRA OF HYDRACID MOLECULES COMPRESSED BY FOREIGN GASES | 5 | 11 |
288 | 1 | 17 | 667 1982 JOURNAL DE PHYSIQUE 43 (NC-9): 199-203 BERGMAN C; CHASTEL R VAPOR-PRESSURE MEASUREMENTS ON AMORPHOUS GE16TE84 ALLOY BY KNUDSEN CELL MASS-SPECTROMETRY | 0 | 1 |
289 | 2 | 12 | 10 1954 JOURNAL DE PHYSIQUE ET LE RADIUM 15 (6): 508-510 GIGUERE PA; SECCO EA *ETUDE SPECTROSCOPIQUE DUN ISOMERE DU PEROXYDE DHYDROGENE | 0 | 17 |
290 | 1 | 20 | 49 1958 JOURNAL DE PHYSIQUE ET LE RADIUM 19 (8-9): 688-693 CAMEO M LARGEUR DE RAIES DANS LE SPECTRE DE VIBRATION-ROTATION POUR HCL ET CH4 - VARIATION AVEC LA PRESSION | 0 | 2 |
# | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
291 | 2 | 35 | 449 1973 JOURNAL OF APPLIED PHYSICS 44 (8): 3401-3403 ARESTI A; CONGIU A; MANCA P; SPIGA A THERMAL-CONDUCTIVITY OF CDSXSE1-X SOLID-SOLUTIONS | 0 | 1 |
292 | 2 | 14 | 597 1979 JOURNAL OF APPLIED PHYSICS 50 (4): 2548-2551 KUNG RTV; MANI SA TRIPLING OF CO2-LASER FREQUENCY IN DEUTERIUM CHLORIDE GAS | 0 | 4 |
293 | 6 | 35 | 598 1979 JOURNAL OF APPLIED PHYSICS 50 (11): 6648-6655 AMEUR Y; DELAPORTE T; MENARD J; MENARDBOURCIN F HCL PULSED CHEMICAL-LASER - EXPERIMENTAL-STUDY AND MODELING | 0 | 3 |
294 | 1 | 19 | 50 1958 JOURNAL OF ATMOSPHERIC AND TERRESTRIAL PHYSICS 13 (1-2): 45-60 JONES AV; HARRISON AW 1DELTA-G-3SIGMA-G-O-2 INFRARED EMISSION BAND IN THE TWILIGHT AIRGLOW SPECTRUM | 0 | 42 |
295 | 1 | 11 | 210 1966 JOURNAL OF CATALYSIS 5 (2): 361-& SANCIER KM; MORRISON SR; WIESENDA HU CATALYTIC AND CHEMICAL REACTION RATES OF HYDROGEN ATOMS WITH GERMANIUM | 1 | 7 |
296 | 1 | 9 | 211 1966 JOURNAL OF CATALYSIS 6 (1): 57-& BRACKEN RC CATALYSIS OF FORMIC ACID DECOMPOSITION BY SURFACE-DOPED GERMANIUM | 1 | 1 |
297 | 1 | 10 | 490 1975 JOURNAL OF CHEMICAL AND ENGINEERING DATA 20 (1): 29-30 RAO YJ; VISWANATH DS SOLUBILITY OF CHLORAMINE IN ORGANIC LIQUIDS | 0 | 1 |
298 | 0 | 11 | 1 1951 JOURNAL OF CHEMICAL PHYSICS 19 (12): 1599-1604 JONES LH; BADGER RM; MOORE GE THE INFRARED SPECTRUM AND THE STRUCTURE OF GASEOUS NITROUS ACID | 112 | 112 |
299 | 1 | 22 | 4 1952 JOURNAL OF CHEMICAL PHYSICS 20 (10): 1570-1575 TARTE P ROTATIONAL ISOMERISM AS A GENERAL PROPERTY OF ALKYL NITRITES | 19 | 186 |
300 | 0 | 10 | 7 1953 JOURNAL OF CHEMICAL PHYSICS 21 (11): 2091-2092 MOORE GE; WULF OR; BADGER RM THE PHOTOCHEMICAL DECOMPOSITION OF NITRIC OXIDE BY ABSORPTION IN THE (0,0) AND (1,0) GAMMA-BANDS | 8 | 8 |
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