| Author(s) | Gorelik VS; Karuzskii AL; Sverbil' PP; Cheryvakov AV
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| Title | Laser-excited volume secondary radiation in wide-gap semiconductors and dielectrics
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| Source | JOURNAL OF RUSSIAN LASER RESEARCH 23 (5): 459-483
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| Date | 2002 SEP-OCT
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| Type | Journal : Article
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| LCR: 2 NCR: 30 LCS: 0 GCS: 1
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| Address | Russian Acad Sci, PN Lebedev Phys Inst, Moscow 119991, Russia.
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| Reprint | Gorelik, VS, Russian Acad Sci, PN Lebedev Phys Inst, Leninskii Pr 53,
Moscow 119991, Russia.
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| Abstract | Studies of the volume secondary radiation (photoluminescence and Raman scattering) in wide-pap semiconductors (GaP, ZnSe) and Condensed dielectrics were carried out at various temperatures. Tit(! low-temperature variations of the dielectric. constants were evaluated. The anti-Stokes photoluminescence front the sample bulk resulting from interband and impurity recombination. Was observed for the first time wheil exciting the spectra of, radiation by the continuous radiation of a low-power laser with the lasing line in the transparency region of gallium phosphide. A similar effect was observed at low temperatures in zine selenide excited by an argon laser. Photoluminescence front the sample bulk was also found for a number of condensed dielectrics (Hydrocarbons and oil) at room temperature. The results obtained allow analysis of impurities in the bulk of semiconductors and dielectrics based oil recording the volume photoluminescence spectra.
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AGALTSOV AM, 1998, RAMAN SCATTERING 70, P440
AGALTSOV AM, 2000, OPT SPECTROSC+, V88, P868
ASHKINADZE BM, 1968, FIZ TEKH POLUPROV, V2, P1511
ASHKINADZE BM, 1968, FIZ TVERD TELA, V10, P3681
ASHKINADZE BM, 1968, P 9 INT C PHYS SEM M, V1, P200
ASHKINADZE BM, 1969, FIZ TEKH POLUPROV, V3, P535
AVEN M, 1967, PHYSICS CHEM 2 6 COM
BARKER AS, 1968, PHYS REV, V165, P917
BORN M, 1954, DYNAMICAL THEORY CRY
BROSER I, 1962, LUMINESCENCE ORGANIC, P402
CHIBA M, 2001, PHYSICA B, V302, P408
GALANIN MD, 1999, LUMINESCENCE MOL CRY
GAVRILENKO VI, 1987, OPTICAL PROPERTIES S
GEISECKE G, 1958, ACTA CRYSTALLOGR, V11, P369
GEORGOBIANI AN, 1986, P A11 BVI COMP NAUK
GORELIK VS, 1982, RAMAN SCATTERING LAT, V132, P46
GORELIK VS, 1999, B PN LEBEDEV PHYS I, P1
ISAEV AA, 1972, PISMA ESKP TEOR FIZ, V16, P40
IVANOV VY, 1997, J LUMIN, V72, P101
KARUZSKII AL, 1996, MIKROELEKTRONIKA, V25, P13
KLEINMAN DA, 1960, PHYS REV, V118, P110
KOROSTELIN YV, 1996, J CRYST GROWTH, V161, P51
LYDDANE RH, 1941, PHYS REV, V59, P673
PATRICK L, 1969, PHYS REV, V188, P1254
STRAUMANIS ME, 1967, J ELECTROCHEM SOC, V114, P640
SZIGETI B, 1949, T FARADAY SOC, V45, P155
THOMAS DG, 1965, PHYS REV A, V140, P202
TOURNIE E, 1996, APPL PHYS LETT, V68, P1356
YUNOVICH AE, 1972, RAD RECOMBINATION SE, P273
ZHURKIN BG, 1988, OPTICALLY EXCITED SE, V188, P178
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