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Nodes: 45,
Authors: 67,
Journals: 23,
Outer References: 323,
Words: 199,
Tags: 1
Collection span: 1951 - 2003
View: Overview. Sorted by GCS.
| # | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
|---|---|---|---|---|---|
| 1 | 2 | 27 | 9 1956 CANADIAN JOURNAL OF PHYSICS 34 (8): 850-875 BENEDICT WS; HERMAN R; MOORE GE; SILVERMAN S THE STRENGTHS, WIDTHS, AND SHAPES OF INFRARED LINES .2. THE HC1 FUNDAMENTAL | 3 | 147 |
| 2 | 1 | 29 | 8 1956 CANADIAN JOURNAL OF PHYSICS 34 (8): 830-849 BENEDICT WS; HERMAN R; MOORE GE; SILVERMAN S THE STRENGTHS, WIDTHS, AND SHAPES OF INFRARED LINES .1. GENERAL CONSIDERATIONS | 3 | 141 |
| 3 | 3 | 31 | 13 1962 ASTROPHYSICAL JOURNAL 135 (1): 277-& BENEDICT WS; SILVERMAN S; HERMAN R; MOORE GE STRENGTHS, WIDTHS, AND SHAPES OF LINES IN VIBRATION-ROTATION BANDS OF CO | 0 | 130 |
| 4 | 2 | 13 | 12 1957 JOURNAL OF CHEMICAL PHYSICS 26 (6): 1671-1677 BENEDICT WS; HERMAN R; MOORE GE; SILVERMAN S INFRARED LINE AND BAND STRENGTHS AND DIPOLE MOMENT FUNCTION IN HCL AND DCL | 1 | 118 |
| 5 | 0 | 11 | 1 1951 JOURNAL OF CHEMICAL PHYSICS 19 (12): 1599-1604 JONES LH; BADGER RM; MOORE GE THE INFRARED SPECTRUM AND THE STRUCTURE OF GASEOUS NITROUS ACID | 0 | 112 |
| 6 | 0 | 10 | 2 1952 JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 74 (23): 6076-6080 MOORE GE; BADGER RM THE INFRARED SPECTRA AND STRUCTURE OF THE CHLORAMINES AND NITROGEN TRICHLORIDE | 0 | 71 |
| 7 | 0 | 13 | 4 1953 JOURNAL OF THE OPTICAL SOCIETY OF AMERICA 43 (11): 1045-1050 MOORE GE THE SPECTRUM OF NITROGEN DIOXIDE IN THE 1.4-3.4-MU REGION AND THE VIBRATIONAL AND ROTATIONAL CONSTANTS OF THE NO2 MOLECULE | 0 | 50 |
| 8 | 0 | 3 | 20 1970 ELECTRONICS 43 (4): 126-& MOORE GE WHAT LEVEL OF LSI IS BEST FOR YOU | 0 | 44 |
| 9 | 0 | 5 | 17 1969 IEEE SPECTRUM 6 (10): 28-& VADASZ LL; GROVE AS; ROWE TA; MOORE GE SILICON-GATE TECHNOLOGY | 0 | 39 |
| 10 | 0 | 9 | 10 1956 JOURNAL OF PHYSICAL CHEMISTRY 60 (6): 813-815 MOORE GE; SHULER KE; SILVERMAN S; HERMAN R THE REACTIONS OF AMMONIA AND HYDRAZINE WITH OXYGEN ATOMS AND HYDROGEN ATOMS IN ATOMIC FLAMES | 0 | 18 |
| # | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
| 11 | 0 | 0 | 21 1970 ELECTRONICS 43 (20): 56-& NEALE RG; NELSON DL; MOORE GE AMORPHOUS SEMICONDUCTORS .1. NONVOLATILE AND REPROGRAMABLE, READ-MOSTLY MEMORY IS HERE | 0 | 18 |
| 12 | 0 | 56 | 19 1969 PHYSICAL REVIEW 179 (3): 722-& MOORE GE; KLEIN MV THERMAL CONDUCTIVITY OF DOPED AND PURE CADMIUM SULFIDE | 0 | 13 |
| 13 | 0 | 10 | 3 1953 JOURNAL OF CHEMICAL PHYSICS 21 (11): 2091-2092 MOORE GE; WULF OR; BADGER RM THE PHOTOCHEMICAL DECOMPOSITION OF NITRIC OXIDE BY ABSORPTION IN THE (0,0) AND (1,0) GAMMA-BANDS | 0 | 8 |
| 14 | 0 | 7 | 30 1976 PROCEEDINGS OF THE IEEE 64 (6): 837-841 MOORE GE MICROPROCESSORS AND INTEGRATED ELECTRONIC TECHNOLOGY | 0 | 8 |
| 15 | 0 | 15 | 14 1962 JOURNAL OF PHYSICAL CHEMISTRY 66 (7): 1241-& MOORE GE; SMITH HA; TAYLOR EH CATALYTIC REACTIONS ON SEMICONDUCTORS - HYDROGEN-DEUTERIUM EXCHANGE AND FORMIC ACID DECOMPOSITION ON CHEMICALLY DOPED GERMANIUM | 0 | 7 |
| 16 | 0 | 1 | 44 1998 PROCEEDINGS OF THE IEEE 86 (1): 82-85 Moore GE Cramming more components onto integrated circuits (Reprinted from Electronics, pg 114-117, April 19, 1965) | 0 | 7 |
| 17 | 0 | 5 | 28 1975 SOLID STATE TECHNOLOGY 18 (2): 40-43 MOORE GE; LAW T WORLDWIDE WAFER STANDARDIZATION - FACT OR FANCY | 0 | 3 |
| 18 | 0 | 13 | 43 1998 PROCEEDINGS OF THE IEEE 86 (1): 53-62 Moore GE The role of Fairchild in silicon technology in the early days of "silicon valley" | 0 | 3 |
| 19 | 0 | 0 | 5 1955 JOURNAL OF THE OPTICAL SOCIETY OF AMERICA 45 (10): 891-891 HOCHHEIMER BF; MOORE GE A SIMPLE SHORT-PATH ABSORPTION CELL | 1 | 2 |
| 20 | 0 | 29 | 27 1971 JOURNAL OF CHEMICAL PHYSICS 54 (1): 399-& MOORE GE; HANSEN HH DIRECT OBSERVATION OF THERMAL DISSOCIATION OF MOLECULAR NITROGEN | 0 | 2 |
| # | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
| 21 | 0 | 8 | 29 1976 IEEE TRANSACTIONS ON MAGNETICS 12 (6): 719-721 MOORE GE; COTE LJ DUAL STRIPE MAGNETORESISTIVE READ HEADS FOR SPEED INSENSITIVE TAPE READERS | 0 | 2 |
| 22 | 0 | 0 | 31 1977 IEEE TRANSACTIONS ON CONSUMER ELECTRONICS 23 (1): R10-R16 MOORE GE COST STRUCTURE OF SEMICONDUCTOR INDUSTRY AND ITS IMPLICATIONS FOR CONSUMER ELECTRONICS - LUNCHEON ADDRESS | 0 | 2 |
| 23 | 0 | 9 | 45 2003 IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY 13 (2): 219-222 Matthews J; Lee SY; Wellstood FC; Gilbertson AF; Moore GE; et al. Multi channel high-T-C scanning SQUID microscope | 0 | 2 |
| 24 | 0 | 9 | 25 1971 IEEE TRANSACTIONS ON MAGNETICS MAG7 (3): 751-& MOORE GE HIGH-SPEED STROBOSCOPIC ANALYSIS OF A CURRENT-DRIVE MAGNETIC-DOMAIN PROPAGATING CIRCUIT | 0 | 1 |
| 25 | 0 | 1 | 6 1955 PHYSICAL REVIEW 98 (5): 1550-1551 HERMAN R; MOORE GE; SILVERMAN S; WALLIS RF VIBRATION-ROTATION LINE INTENSITIES IN HCL AND DCL | 0 | 0 |
| 26 | 0 | 2 | 7 1955 PHYSICAL REVIEW 98 (5): 1551-1551 BENEDICT WS; MOORE GE; SILVERMAN S COLLISION LINE WIDTHS AND SHAPES IN THE VIBRATION-ROTATION BANDS OF HCL | 0 | 0 |
| 27 | 0 | 0 | 11 1956 SPECTROCHIMICA ACTA 8 (4-5): 292-292 MANN DE; BALL JJ; MOORE GE THE EMISSION SPECTRUM OF THE HYDROGEN-FLUORINE FLAME | 0 | 0 |
| 28 | 0 | 0 | 15 1965 IEEE SPECTRUM 2 (3): 49-& MOORE GE MOS TRANSISTOR AS AN INDIVIDUAL DEVICE AND IN INTEGRATED ARRAYS | 0 | 0 |
| 29 | 0 | 3 | 16 1968 IEEE TRANSACTIONS ON MAGNETICS MAG4 (3): 319-& MOORE GE SEMICONDUCTOR MEMORIES | 0 | 0 |
| 30 | 0 | 0 | 18 1969 IEEE TRANSACTIONS ON ELECTRON DEVICES ED16 (2): 234-& MOORE GE TRENDS IN SILICON DEVICE TECHNOLOGY | 0 | 0 |
| # | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
| 31 | 0 | 0 | 22 1970 IEEE TRANSACTIONS ON MAGNETICS MAG6 (3): 590-& MOORE GE COMPETITIVE POTENTIAL OF SEMICONDUCTOR MEMORIES | 0 | 0 |
| 32 | 0 | 0 | 23 1971 COMPUTER 4 (2): 6-& MOORE GE SEMICONDUCTOR RAMS - STATUS REPORT | 0 | 0 |
| 33 | 0 | 0 | 24 1971 IEEE TRANSACTIONS ON MAGNETICS MAG7 (3): 404-& MOORE GE PERSPECTIVE OF CHARGE-TRANSFER DEVICES AND OTHER SHIFT REGISTERS | 0 | 0 |
| 34 | 0 | 35 | 26 1971 IEEE TRANSACTIONS ON POWER APPARATUS AND SYSTEMS PA90 (5): 2030-& HARRIS LP; MOORE GE COMBUSTION-MHD POWER GENERATION FOR CENTRAL STATIONS | 0 | 0 |
| 35 | 0 | 0 | 32 1982 ELECTRONICS 55 (12): 8-8 MOORE GE RUMOR OF A REPORT | 0 | 0 |
| 36 | 0 | 0 | 33 1982 ELECTRONICS 55 (25): 118-127 HELLER KE; SHUGART AF; LOHMANN FA; DARCY J; ROESSLE HF; et al. 11TH SURVEY SHOWS THAT ELECTRONICS LEADERS AROUND THE WORLD SHARE HOPE THAT THEIR STALLED ECONOMIES WILL REV UP IN 1983 | 0 | 0 |
| 37 | 0 | 0 | 34 1983 ELECTRONICS 56 (14): 24-24 MOORE GE NEEDED - MORE GOVERNMENT SUPPORT OF RESEARCH | 0 | 0 |
| 38 | 0 | 0 | 35 1984 IEEE DESIGN & TEST OF COMPUTERS 1 (4): 15-23 MOORE GE A MACRO VIEW OF MICROELECTRONICS - MOORE,GORDON,E. OF INTEL | 0 | 0 |
| 39 | 0 | 0 | 36 1985 HEWLETT-PACKARD JOURNAL 36 (11): 34-35 MOORE GE; SEYMOUR RS; BLOOMQUIST DR MANUFACTURING THIN-FILM DISKS | 0 | 0 |
| 40 | 0 | 0 | 37 1990 ELECTRONICS 63 (8): 95-95 MOORE GE INTELS EXIT FROM DRAMS WAS INTIMATELY TIED TO IBMS MICROPROCESSOR STRATEGY - THE TOUGH CHOICES | 0 | 0 |
| # | LCR | NCR | Node / Date / Journal / Author | LCS | GCS |
| 41 | 0 | 0 | 38 1991 COMPUTER 24 (9): 105-106 MOORE GE SEMICONDUCTOR TECHNOLOGY REACHES MIDDLE-AGE | 0 | 0 |
| 42 | 0 | 0 | 39 1994 LASER FOCUS WORLD 30 (6): S37-& MOORE GE FIBEROPTIC CONNECTORS EXCEED APPLICATION REQUIREMENTS | 0 | 0 |
| 43 | 0 | 0 | 40 1994 MICROELECTRONICS JOURNAL 25 (1): R11-R15 MOORE GE A QUARTER OF A CENTURY OF MICROELECTRONICS | 0 | 0 |
| 44 | 0 | 0 | 41 1997 COMMUNICATIONS OF THE ACM 40 (2): 112-114 Moore GE The microprocessor: Engine of the technology revolution | 0 | 0 |
| 45 | 0 | 0 | 42 1997 COMPUTER 30 (1): 16-21 Elliott TM; Parrish EA; Hoare T; Corbato FJ; Bloch E; et al. The next 50 years of computing | 0 | 0 |
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