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Author(s): Bell LD; Kaiser WJ
Title: Ballistic-electron-emission microscopy: A nanometer-scale probe of interfaces and carrier transport
Source: ANNUAL REVIEW OF MATERIALS SCIENCE 26: 189-222
Date: 1996
Document Type: Journal : Review
DOI:
Language: English
Comment:
Address: UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90095.
Reprint: Bell, LD, CALTECH,JET PROP LAB,CTR SPACE MICROELECTR
TECHNOL,PASADENA,CA 91109. E-mail:
Author Keywords: scanning tunneling microscopy; semiconductor interfaces; hot-electron
transport; semiconductor heterostructures; band structure
KeyWords Plus: SCANNING-TUNNELING-MICROSCOPE; SCHOTTKY-BARRIER HEIGHT; METAL-
SEMICONDUCTOR INTERFACES; MOLECULAR-BEAM EPITAXY; GOLD-SILICON
INTERFACE; MIXED-PHASE CONTACTS; DENSITY-OF-STATES; ELASTIC-SCATTERING;
IMPACT IONIZATION; BAND-STRUCTURE
Abstract: Ballistic-electron-emission microscopy (BEEM) is a relatively new technique for the investigation of semiconductor interfaces and energetic carrier transport over a wide energy range about the Fermi level. Because BEEM is based on scanning tunneling microscopy, which provides an atomic-scale probe of surfaces, it can resolve interface properties with nanometer-scale spatial resolution. BEEM techniques have been applied to the spatially resolved measurement of Schottky barrier height and to the energy spectroscopy of hot carrier transport in metal/semiconductor devices.
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